Tokyo Electron Device and ITES Collaborate on Inspection Solution to Visualize Latent Defects in SiC Devices at the Wafer Level

AI Summary (NQ-processed)

Tokyo Electron Device (TED) and ITES have announced a collaboration in the field of latent defect inspection solutions for SiC (silicon carbide) devices. They will jointly develop and sell the 'SiC Latent Defect Inspection System / Current-Induced Degradation Simulator ITS-SCX100' to visualize latent crystal defects within SiC wafers using UV laser irradiation. This partnership aims to enhance the development of highly reliable devices for customers, primarily in the power electronics sector, by shortening evaluation times and improving quality assurance processes.