Approximately 30% Reduction in On-Resistance at High Temperatures! Development of 5th Generation SiC MOSFET
NQ Score
42/100
N1 Content Completeness
4
AI Summary (NQ-processed)
ROHM Co., Ltd. has developed a 5th generation SiC MOSFET, achieving approximately 30% reduction in on-resistance at high temperatures. This is a significant advancement in semiconductor technology, contributing to improved power efficiency.