Successful Deposition of Rutile Germanium Dioxide (r-GeO₂) Thin Film on 6-inch Si Substrate
NQ Score
88/100
N1 Content Completeness
90
AI Summary (NQ-processed)
Patentix Inc., in collaboration with JTEKT Thermo System Corporation, has successfully developed a new deposition system compatible with 6-inch substrates and deposited a thin film of rutile germanium dioxide (r-GeO₂), a next-generation power semiconductor material, on a 6-inch Si wafer. This marks a significant step towards realizing large-diameter substrates necessary for mass production of power devices, with sample prototyping targeted for 2027.