Successful Growth of Rutile-type Germanium Dioxide (r-GeO₂) Single-Crystal Film on Si Substrate
NQ Score
41/100
N1 Content Completeness
4
AI Summary (NQ-processed)
Patentix Inc., in collaboration with JTEKT Thermo System Co., Ltd., has successfully developed a new deposition apparatus compatible with 6-inch wafers and achieved the growth of single-crystal rutile-type germanium dioxide (r-GeO₂) film on a Si substrate, a next-generation power semiconductor material.