Success in Depositing Rutile-type Germanium Dioxide (r-GeO₂) Single-Crystal Film on Si Substrate

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Patentix Inc., in collaboration with JTEKT THERMO-SYSTEM Co., Ltd., has successfully deposited a single-crystal film of rutile-type germanium dioxide (r-GeO₂), a next-generation power semiconductor material, onto a silicon (Si) substrate. This achievement establishes a foundation for realizing inexpensive and high-performance vertical power devices.

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Patentix Inc., in collaboration with JTEKT THERMO-SYSTEM Co., Ltd., has successfully deposited a single-crystal film of rutile-type germanium dioxide (r-GeO₂), a next-generation power semiconductor material, onto a silicon (Si) substrate. This achievement establishes a foundation for realizing inexpensive and high-performance vertical power devices.

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Source: https://prtimes.jp/main/html/rd/p/000000028.000128234.html | Date: Date unavailable

May 13, 2026 Patentix Inc. Patentix Inc. (hereinafter referred to as "the Company"), in collaboration with JTEKT THERMO-SYSTEM Co., Ltd., has developed and manufactured a new 6-inch compatible deposition apparatus, successfully depositing a single-crystal film of rutile-type germanium dioxide (r-GeO₂), a next-generation power semiconductor material, onto a Si substrate. ## Background Rutile-type germanium dioxide (r-GeO₂) is a next-generation power semiconductor material with a larger bandgap (4.68eV) than silicon carbide (SiC) and gallium nitride (GaN), and is expected to reduce energy loss associated with power conversion. For the practical application of r-GeO₂ power devices, it is essential to realize large-diameter r-GeO₂ substrates of 6 inches or more that are compatible with power device production lines. The Company has been advancing research and development in deposition technology, including developing its unique deposition method suitable for r-GeO₂, called the PhantomSVD method, and achieving the deposition of single-crystal r-GeO₂ films across the entire surface of r-TiO₂ substrates. In a press release in July 2025, the Company announced its success in fabricating r-GeO₂ films on Si substrates, and this time, it has succeeded in depositing the r-GeO₂ single-crystal film indispensable for power device applications. ## Achievements In the previous announcement, the "foundational technology" of depositing r-GeO₂ on Si substrates was established. However, to realize power devices that require high voltage without breakdown and no leakage current in the OFF state, it is essential to fabricate devices using r-GeO₂ single-crystal films where atoms are regularly arranged. This time, the Company jointly manufactured a new 6-inch substrate-compatible deposition apparatus with JTEKT THERMO-SYSTEM Co., Ltd., adopting its independently developed deposition method (named the "Chimney method"). By using the manufactured "Chimney method" deposition apparatus, the Comp

Success in Depositing Rutile-type Germanium Dioxide (r-GeO₂) Single-Crystal Film on Si Substrate

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