Rutile-type germanium dioxide (r-GeO₂) is a next-generation power semiconductor material with a larger bandgap (4.68 eV) than silicon carbide (SiC) or gallium nitride (GaN), theoretically predicted to exhibit both p-type and n-type conductivity.

What is the key achievement of this work?

The successful fabrication and demonstration of transistor operation in a depletion-type MOSFET using r-GeO₂, a material attracting attention as a next-generation power semiconductor. This is a crucial step towards the realization of future enhancement-type MOSFETs.

What are the future prospects?

We plan to establish fabrication technology for p-type r-GeO₂ and proceed with studies towards demonstrating the operation of enhancement-type MOSFETs utilizing this technology.

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Successful Demonstration of Transistor Operation in Depletion-Type r-GeO₂ MOSFET

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Patentix has successfully demonstrated the operation of a MOSFET using r-GeO₂, a next-generation power semiconductor material.

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Frequently Asked Questions

Q: What is r-GeO₂?: A: Rutile-type germanium dioxide (r-GeO₂) is a next-generation power semiconductor material with a larger bandgap (4.68 eV) than silicon carbide (SiC) or gallium nitride (GaN), theoretically predicted to exhibit both p-type and n-type conductivity.
Q: What is the key achievement of this work?: A: The successful fabrication and demonstration of transistor operation in a depletion-type MOSFET using r-GeO₂, a material attracting attention as a next-generation power semiconductor. This is a crucial step towards the realization of future enhancement-type MOSFETs.
Q: What are the future prospects?: A: We plan to establish fabrication technology for p-type r-GeO₂ and proceed with studies towards demonstrating the operation of enhancement-type MOSFETs utilizing this technology.