FLOSFIA Inc. Develops Next-Generation Power Semiconductors with JST Support, Aiming for Reduced Power Loss and Lower Costs
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87/100
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90
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FLOSFIA Inc., with support from JST, is developing next-generation power semiconductors utilizing alpha-gallium oxide. This initiative aims to achieve both world-class low power loss and high breakdown voltage, while also enabling cost reduction through its proprietary "MistDry® method." The goal is to improve power conversion efficiency in various applications such as AI data centers and electric vehicles, contributing to energy conservation and CO2 emission reduction.